smd type ic www.kexin.com.cn 1 smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1base 2 collector 3emitter 4 collector surface mount pnp silicon power darlington transistor kzt127 (CZT127) features high current (max. 5a). low voltage (max. 100v). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to emitter breakdown voltage v ceo i c =-30ma -100 v collctor cutoff current i ceo v ce =-50v -500 a collector cutoff current i cbo v cb = -100 v -200 a emitter cutoff current i ebo v eb =-5.0v -2.0 ma i c =- 500 ma; v ce =-3.0 v 1000 i c =-3a;v ce = -3.0v 1000 i c = -3.0a; i b =- 12ma -2.0 v base to emitter saturation voltage v be(sat) i c = -5.0a; i b = -20ma -4.0 v output capacitance c ob v cb =-10v,i e = 0,f=1.0mhz 300 pf transition frequency f t i c =-3a;v ce =-4v; f = 1.0 mhz 4.0 mhz v ce(sat) collector to emitter saturation voltage h fe dc current gain absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v i c -5 a i cp -8 a base current i b -120 ma power dissipation p d 2w thermal resistance.j unction-to-ambient r ja 62.5 /w junction temperature t j 150 storage temperature t stg -65to+150 collector current
|
